www.irf.com 1 irf7469pbf smps mosfet hexfet power mosfet notes through are on page 8 symbol parameter typ. max. units r jl junction-to-drain lead CCC 20 r ja junction-to-ambient CCC 50 c/w thermal resistance absolute maximum ratings symbol parameter max. units v ds drain-source voltage 40 v v gs gate-to-source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 10v 9.0 i d @ t a = 70c continuous drain current, v gs @ 10v 7.3 a i dm pulsed drain current 73 p d @t a = 25c maximum power dissipation 2.5 w p d @t a = 70c maximum power dissipation 1.6 w linear derating factor 0.02 mw/c t j , t stg junction and storage temperature range -55 to + 150 c so-8 top view 8 12 3 4 5 6 7 d d d d g s a s s a v dss r ds(on) max(m i d 40v 17@v gs = 10v 9.0a applications benefits ultra-low gate impedance very low r ds(on) fully characterized avalanche voltage and current high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use high frequency buck converters for computer processor power lead-free downloaded from: http:///
irf7469pbf 2 www.irf.com symbol parameter min. typ. max. units conditions g fs forward transconductance 17 CCC CCC s v ds = 20v, i d = 7.2a q g total gate charge CCC 15 23 i d = 7.2a q gs gate-to-source charge CCC 7.0 11 nc v ds = 20v q gd gate-to-drain ("miller") charge CCC 5.0 8.0 v gs = 4.5v q oss output gate charge CCC 16 24 v gs = 0v, v ds = 16v t d(on) turn-on delay time CCC 11 CCC v dd = 20v t r rise time CCC 2.2 CCC i d = 7.2a t d(off) turn-off delay time CCC 14 CCC r g = 1.8 ? t f fall time CCC 3.5 CCC v gs = 4.5v c iss input capacitance CCC 2000 CCC v gs = 0v c oss output capacitance CCC 480 CCC v ds = 20v c rss reverse transfer capacitance CCC 28 CCC pf ? = 1.0mhz symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) CCC CCC p-n junction diode. CCC 0.80 1.3 v t j = 25c, i s = 7.2a, v gs = 0v CCC 0.65 CCC t j = 125c, i s = 7.2a, v gs = 0v t rr reverse recovery time CCC 47 71 ns t j = 25c, i f = 7.2a, v r =15v q rr reverse recovery charge CCC 91 140 nc di/dt = 100a/s t rr reverse recovery time CCC 77 120 ns t j = 125c, i f = 7.2a, v r =20v q rr reverse recovery charge CCC 150 230 nc di/dt = 100a/s dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter typ. max. units e as single pulse avalanche energy CCC 210 mj i ar avalanche current CCC 7.2 a avalanche characteristics s d g diode characteristics 2.3 73 v sd diode forward voltage parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.04 CCC v/c reference to 25c, i d = 1ma CCC 12 17 v gs = 10v, i d = 9.0a CCC 15.5 21 v gs = 4.5v, i d = 7.2a v gs(th) gate threshold voltage 1.0 CCC 3.0 v v ds = v gs , i d = 250a CCC CCC 20 a v ds = 32v, v gs = 0v CCC CCC 100 v ds = 32v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 200 v gs = 16v gate-to-source reverse leakage CCC CCC -200 na v gs = -16v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance m ? downloaded from: http:///
irf7469pbf www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 10v 8.0v 7.0v 5.0v 4.5v 4.0v 3.7v 3.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 3.5v 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 10v 8.0v 7.0v 5.0v 4.5v 4.0v 3.7v 3.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 3.5v 10 100 3.5 4.0 4.5 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 9.0a downloaded from: http:///
irf7469pbf 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0 5 10 15 20 25 30 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 7.2a v = 20v ds v = 32v ds fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.4 0.8 1.2 1.6 2.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd downloaded from: http:///
irf7469pbf www.irf.com 5 fig 10. maximum effective transient thermal impedance, junction-to-ambient 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 10.0 t , case temperature ( c) i , drain current (a) c d downloaded from: http:///
irf7469pbf 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 13a&b. basic gate charge test circuit and waveform fig 14a&b. unclamped inductive test circuit and waveforms fig 14c. maximum avalanche energy vs. drain current d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 15 0 0 100 200 300 400 500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 3.2a 5.8a 7.2a 0 2 04 06 08 0 i d , drain current (a) 0.01 0.02 0.03 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = 10v v gs = 4.5v 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v gs, gate -to -source voltage (v) 0.01 0.02 0.03 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 9.0a downloaded from: http:///
irf7469pbf www.irf.com 7 so-8 package outlinedimensions are shown in millimeters (inches) so-8 part marking e1 de y b aa1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] cab e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rolling dimens ion: millimet er 3. dimensions are shown in millimeters [inches]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070 ] dat e code (yww) xxxx international rectifier logo f 7101 y = last digit of the year part number lot code ww = week e xample: t his is an irf7101 (mos f et ) p = de s i gnat e s l e ad- f r e e product (optional) a = assembly site code downloaded from: http:///
irf7469pbf 8 www.irf.com repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 8.1mh r g = 25 ? , i as = 7.2a. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board. 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) n otes: 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters(inches). 3 . outline conforms to eia-481 & eia-541. so-8 tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/04 downloaded from: http:///
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